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Papers by Author: Alexsandre Ellison

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Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC

Authors: Nguyen Tien Son, T. Umeda, Junichi Isoya, Adam Gali, M. Bockstedte, Björn Magnusson, Alexsandre Ellison, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Erik Janzén

Abstract: Electron paramagnetic resonance (EPR) studies of the P6/P7 centers in 4H- and 6H-SiC are reported. The obtained principal values of the hyperfine tensors of C and Si neighbors are in good agreement with the values of the neutral divacancy (VCVSi 0) calculated by ab initio supercell calculations. The results suggest that the P6/P7 centers, which were previously assigned to the photo-excited triplet states of the carbon vacancy-carbon antisite pairs in the double positive charge state (VCCSi 2+), are related to the triplet ground states of the C3v/C1h configurations of VCVSi 0.

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Defects in High-Purity Semi-Insulating SiC

Authors: Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén

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SiC Crystal Growth by HTCVD

Authors: Alexsandre Ellison, Björn Magnusson, Björn Sundqvist, G.R. Pozina, Peder Bergman, Erik Janzén, A. Vehanen

A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates

Authors: Joakim Eriksson, Niklas Rorsman, Herbert Zirath, Anne Henry, Björn Magnusson, Alexsandre Ellison, Erik Janzén

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Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum

Authors: Ivan G. Ivanov, Alexsandre Ellison, Erik Janzén

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Defects in Semi-Insulating SiC Substrates

Authors: Nguyen Tien Son, Björn Magnusson, Z. Zolnai, Alexsandre Ellison, Erik Janzén

HTCVD Grown Semi-Insulating SiC Substrates

Authors: Alexsandre Ellison, Björn Magnusson, Nguyen Tien Son, L. Storasta, Erik Janzén

Growth of High Quality p-Type 4H-SiC Substrates by HTCVD

Authors: Björn Sundqvist, Alexsandre Ellison, A.K. Jonsson, Anne Henry, Christer Hallin, Peder Bergman, Björn Magnusson, Erik Janzén

Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy

Authors: Anne Henry, Alexsandre Ellison, Urban Forsberg, Björn Magnusson, G.R. Pozina, Erik Janzén

593

Properties of the UD-1 Deep-Level Center in 4H-SiC

Authors: Björn Magnusson, Alexsandre Ellison, Erik Janzén

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