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Articles by author: Alexsandre Ellison

• A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p737)
• As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p365)
• Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p593)
• Chromium in 4H and 6H SiC: Photoluminescence and Zeeman Studies
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p603)
• CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p123)
• Defects in High-Purity Semi-Insulating SiC
  Published in: Silicon Carbide and Related Materials 2003 (p437)
• Defects in Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p45)
• Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
  Published in: Silicon Carbide and Related Materials - 1999 (p1171)
• Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p527)
• Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
  Published in: Silicon Carbide and Related Materials - 2002 (p321)
• Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
  Published in: Silicon Carbide and Related Materials 2000 (p91)
• Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
  Published in: Silicon Carbide and Related Materials - 1999 (p131)
• Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p103)
• Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
  Published in: Silicon Carbide and Related Materials 2001 (p191)
• Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
  Published in: Silicon Carbide and Related Materials - 2002 (p21)