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Articles by author: Alexsandre Ellison

• High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p921)
• HTCVD Grown Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p33)
• In Situ Etching of 4H-SiC in H₂ with Addition of HCl for Epitaxial CVD Growth
  Published in: Silicon Carbide and Related Materials 2001 (p239)
• Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 1999 (p1175)
• Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy
  Published in: Silicon Carbide and Related Materials 2000 (p405)
• Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
  Published in: Silicon Carbide and Related Materials - 1999 (p137)
• Presence of Hydrogen in SiC
  Published in: Silicon Carbide and Related Materials 2000 (p373)
• Properties of the UD-1 Deep-Level Center in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p505)
• SiC Crystal Growth by HTCVD
  Published in: Silicon Carbide and Related Materials 2003 (p9)