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Articles by author: Anne Henry

• 4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
  Published in: Silicon Carbide and Related Materials 2006 (p53)
• 6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p347)
• A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p737)
• A Metastable Selenium-Related Center in Silicon
  Published in: Defects in Semiconductors 17 (p159)
• A New Photoluminescent Center in Mercury-Doped Silicon
  Published in: Defects in Semiconductors 17 (p117)
• Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
  Published in: Silicon Carbide and Related Materials 2001 (p203)
• Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes
  Published in: Advances in Innovative Materials and Applications (p233)
• Bound Exciton Recombination in Electron Irradiated 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p477)
• Carrier Removal in Electron Irradiated 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials 2007 (p425)
• Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions
  Published in: Silicon Carbide and Related Materials 2011 (p109)
• Cathodoluminescence of Defect Regions in SiC Epi-Films
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p653)
• Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p489)
• Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p593)
• Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2010 (p75)
• Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers
  Published in: Silicon Carbide and Related Materials 2009 (p107)