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Articles by author: Björn Magnusson

• Presence of Hydrogen in SiC
  Published in: Silicon Carbide and Related Materials 2000 (p373)
• Properties of the UD-1 Deep-Level Center in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2001 (p505)
• SiC Crystal Growth by HTCVD
  Published in: Silicon Carbide and Related Materials 2003 (p9)
• Temperature-Dependent Hall Effect Measurements in Low – Compensated p-Type 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p677)
• The Carbon Vacancy Related EI4 Defect in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p399)
• The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
  Published in: Silicon Carbide and Related Materials 2007 (p397)
• The Silicon Vacancy in SiC
  Published in: Silicon Carbide and Related Materials 2008 (p347)
• Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p301)
• Vanadium-related Center in 4H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 1999 (p631)