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Articles by author: Bo Monemar

• Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells
  Published in: Defects in Semiconductors 16 (p1363)
• Radiative Recombination in InGaN/GaN Multiple Quantum Wells
  Published in: Silicon Carbide and Related Materials - 1999 (p1571)
• Room Temperature Photoluminescence Linewidth versus Material Quality of GaN
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1319)
• SF₆/0₂ and CF₄/0₂ Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen
  Published in: Defects in Semiconductors 18 (p1807)
• Strain Effects Induced by Gold Diffusion in Silicon
  Published in: Defects in Semiconductors 15 (p747)
• The Carbon Vacancy Pair in 4H and 6H SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p821)
• The Configurational Change of a Metastable S-Cu Defect in Silicon
  Published in: Defects in Semiconductors 17 (p1179)
• The Neutral Silicon Vacancy in 6H and 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p473)
• The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy
  Published in: Defects in Semiconductors 16 (p327)
• The Role of Non-Radiative Defects in Thermal Quenching of Luminescence in SiGe/Si Structures Grown by Molecular Beam Epitaxy
  Published in: Defects in Semiconductors 19 (p139)
• Thick GaN Films Grown on Sapphire: Defects in Highly Mismatched Systems
  Published in: Defects and Diffusion in Semiconductors IV (p1)