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Articles by author: Brett A. Hull

• 1700V, 20A 4H-SiC DMOSFETs Optimized for High Temperature Operation
  Published in: Silicon Carbide and Related Materials 2010 (p633)
• A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs
  Published in: Silicon Carbide and Related Materials 2006 (p775)
• Critical Technical Issues in High Voltage SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2007 (p895)
• Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
  Published in: Silicon Carbide and Related Materials 2006 (p77)
• Development of 8 mΩ-cm², 1.8 kV 4H-SiC DMOSFETs
  Published in: Silicon Carbide and Related Materials 2005 (p1261)
• Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2007 (p931)
• Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
  Published in: Silicon Carbide and Related Materials 2004 (p965)
• Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
  Published in: Silicon Carbide and Related Materials 2006 (p921)
• Evaluation of 4H–SiC DMOSFETs for High–Power Electronics Applications
  Published in: Silicon Carbide and Related Materials 2007 (p1135)
• Evolution of Drift-Free, High Power 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p1329)
• High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
  Published in: Silicon Carbide and Related Materials 2005 (p1355)
• High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes
  Published in: Silicon Carbide and Related Materials 2005 (p1339)
• Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300ºC NO Anneal
  Published in: Silicon Carbide and Related Materials 2005 (p967)
• Low Frequency Noise in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2008 (p817)
• Luminescence Imaging of Extended Defects in SiC via Hyperspectral Imaging
  Published in: Silicon Carbide and Related Materials 2011 (p403)