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Articles by author: E.A. Steinman

• 1D Properties of Straight Dislocation Segments in Si and Ge
  Published in: Defects in Semiconductors 17 (p537)
• Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si_1-xGe_x Epitaxial Structures Obtained by MBE Method
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p377)
• Dependence of Luminescence Properties of Bonded Si Wafers on Surface Orientation and Twist Angle.
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p555)
• Dislocation Related Electroluminescence at Room Temperature in Plastically Deformed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p419)
• Dislocation Related PL of Multi-Step Annealed Cz-Si Samples
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p773)
• Electrical and Optical Properties of Dislocations Generated under Pure Conditions
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p453)
• Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p767)
• On the Nature of Dislocation Luminescence in Si and Ge
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p303)
• Peculiarities of Dislocation Luminescence of Covalent Semiconductors
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p335)
• Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p213)
• The Effect of Dislocation Dissociation on the g-Tensor of Holes in Dislocation Related 1D Energy Band in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p299)
• The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p313)
• The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p217)
• The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p23)
• The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p607)