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CONFERENCE
12/9/2012 - 12/12/2012
ACAM7: The 7th Australasian Congress on Applied Mechanics
11/16/2012 - 11/18/2012
2nd International Conference on Manufacturing Engineering and Automation (ICMEA2012)
11/16/2012 - 11/18/2012
more...
Articles by author: Elisabeth Blanquet
16 papers on 2 pages:
1
[2]
[next]
Ab Initio Study of Silicon Carbide: Bulk and Surface Structures
Published in:
Silicon Carbide and Related Materials 2000
(p111)
Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method
Published in:
Silicon Carbide and Related Materials 2000
(p61)
Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics
Published in:
Silicon Carbide and Related Materials - 1999
(p91)
Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
Published in:
Silicon Carbide and Related Materials - 2002
(p141)
Free Growth of 4H-SiC by Sublimation Method
Published in:
Silicon Carbide and Related Materials 2003
(p71)
Growth of Thick AlN Layers by High Temperature CVD (HTCVD)
Published in:
Silicon Carbide and Related Materials 2007
(p1269)
Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)
Published in:
Silicon Carbide and Related Materials 2008
(p987)
Investigation into the Film Growth of AlN on SiC by Low Pressure Chemical Vapour Deposition
Published in:
Silicon Carbide and Related Materials - 1999
(p1507)
Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
Published in:
Silicon Carbide and Related Materials 2004
(p25)
Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
Published in:
Silicon Carbide and Related Materials 2003
(p731)
Numerical Simulation of SiC Boule Growth by Sublimation
Published in:
Silicon Carbide and Related Materials - 1999
(p25)
Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
Published in:
Silicon Carbide and Related Materials 2005
(p71)
Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
Published in:
Silicon Carbide and Related Materials 2004
(p3)
SiC In-Situ Pre-Growth Etching: A Thermodynamic Study
Published in:
Silicon Carbide and Related Materials - 1999
(p1041)
Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
Published in:
Silicon Carbide and Related Materials 2007
(p83)
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