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Articles by author: Emil Tymicki

• Active Thermal Interaction of Source and Crystal Surfaces in PVT SiC Crystal Growth
  Published in: Silicon Carbide and Related Materials 2005 (p87)
• Application of 6H to 4H Polytype Conversion to Effective Reduction of Micropipes in 4H SiC Crystals
  Published in: Silicon Carbide and Related Materials 2007 (p31)
• Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
  Published in: Silicon Carbide and Related Materials 2008 (p19)
• Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside
  Published in: Silicon Carbide and Related Materials 2009 (p21)
• Experimental Verification of a Novel System for the Growth of SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2010 (p16)
• Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method
  Published in: Silicon Carbide and Related Materials 2009 (p17)
• Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
  Published in: Silicon Carbide and Related Materials 2008 (p15)
• Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions
  Published in: Silicon Carbide and Related Materials 2007 (p15)