HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Etienne Pernot

• A Study of HTCVD Renewing of the SiC Polycrystalline Source during the PVT Process
  Published in: Silicon Carbide and Related Materials - 2002 (p87)
• Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
  Published in: Silicon Carbide and Related Materials 2001 (p729)
• Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
  Published in: Silicon Carbide and Related Materials 2004 (p437)
• Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
  Published in: Silicon Carbide and Related Materials 2005 (p99)
• Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
  Published in: Silicon Carbide and Related Materials 2003 (p91)
• Defect Reduction in SiC Crystals Grown by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials - 2002 (p83)
• Dislocation-Induced Birefringence in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p271)
• Electrochemical Characterization of p-Type Hexagonal SiC
  Published in: Silicon Carbide and Related Materials 2000 (p619)
• Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force Microscopy
  Published in: Silicon Carbide and Related Materials 2005 (p435)
• Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
  Published in: Silicon Carbide and Related Materials 2005 (p1501)
• Heat Transfer Modeling of a New Crystal Growth Process
  Published in: Silicon Carbide and Related Materials - 2002 (p103)
• In Situ SiC Feeding by Chemical Vapor Deposition for Bulk Growth
  Published in: Silicon Carbide and Related Materials 2003 (p139)
• Investigation into the Film Growth of AlN on SiC by Low Pressure Chemical Vapour Deposition
  Published in: Silicon Carbide and Related Materials - 1999 (p1507)
• Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
  Published in: Silicon Carbide and Related Materials - 2002 (p265)
• Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
  Published in: Silicon Carbide and Related Materials 2001 (p419)