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Articles by author: Fei Yan

• Columnar Pore Growth in n-Type 6H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p739)
• CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p255)
• Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor
  Published in: Silicon Carbide and Related Materials 2010 (p245)
• Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p417)
• Electrochemical Polishing of p-Type 4H SiC
  Published in: Silicon Carbide and Related Materials 2008 (p601)
• Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p585)
• Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
  Published in: Silicon Carbide and Related Materials 2004 (p493)
• Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport
  Published in: Silicon Carbide and Related Materials 2004 (p9)
• Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC
  Published in: Silicon Carbide and Related Materials 2011 (p263)
• New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and ⁴He Ion Irradiated 4H SiC
  Published in: Silicon Carbide and Related Materials 2009 (p411)
• Photoluminescence Study of C-H and C-D Centers in 4H SiC
  Published in: Silicon Carbide and Related Materials 2003 (p589)
• Shallow Defects Observed in As-Grown and Electron-Irradiated or He⁺-Implanted Al-Doped 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2009 (p427)
• Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons
  Published in: Silicon Carbide and Related Materials 2009 (p419)
• Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons
  Published in: Silicon Carbide and Related Materials 2009 (p423)
• Ultra-Precision Machining of Stainless Steel and Nickel with Single Crystal 4H and 6H Boule SiC
  Published in: Silicon Carbide and Related Materials 2009 (p853)