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Articles by author: Gaetano Foti

• 3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
  Published in: Silicon Carbide and Related Materials 2007 (p243)
• Carbonization Study of Different Silicon Orientations
  Published in: Silicon Carbide and Related Materials 2006 (p171)
• Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p619)
• Defects in High Energy Ion Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p397)
• Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe
  Published in: Silicon Carbide and Related Materials 2008 (p857)
• Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2004 (p429)
• Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
  Published in: Silicon Carbide and Related Materials 2005 (p163)
• Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
  Published in: Silicon Carbide and Related Materials 2006 (p93)
• Growth of 3C-SiC on Si: Influence of Process Pressure
  Published in: Silicon Carbide and Related Materials 2007 (p211)
• New Achievements on CVD Based Methods for SiC Epitaxial Growth
  Published in: Silicon Carbide and Related Materials 2004 (p67)
• Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
  Published in: Silicon Carbide and Related Materials 2005 (p199)
• Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization
  Published in: Silicon Carbide and Related Materials 2006 (p137)
• Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers
  Published in: Silicon Carbide and Related Materials 2009 (p865)
• Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films
  Published in: Silicon Carbide and Related Materials 2008 (p629)
• SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
  Published in: Silicon Carbide and Related Materials 2007 (p123)