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Articles by author: Gerhard Pensl

• SiC/SiO₂ Interface States: Properties and Models
  Published in: Silicon Carbide and Related Materials 2004 (p563)
• (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
  Published in: Silicon Carbide and Related Materials 2006 (p307)
• 4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al₂O₃
  Published in: Silicon Carbide and Related Materials 2006 (p627)
• A P-Channel MOSFET on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p1401)
• ALD Deposited Al₂ O₃ Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere
  Published in: Silicon Carbide and Related Materials 2004 (p559)
• Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System
  Published in: Silicon Carbide and Related Materials 2001 (p207)
• An Investigation of the 78/203 meV Double Acceptor in GaAs Including the Effects of Hydrogen Passivation
  Published in: Shallow Impurities in Semiconductors IV (p175)
• Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
  Published in: Silicon Carbide and Related Materials 2000 (p537)
• Annealing Process of N⁺-/P⁺-Ions Coimplanted along with Si⁺-, C⁺- or Ne⁺-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
  Published in: Silicon Carbide and Related Materials 2003 (p909)
• Beryllium-Related Defect Centers in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p467)
• Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p461)
• Cadmium-Related Defects in Silicon: Electron-Paramagnetic-Resonance Identification
  Published in: Defects in Semiconductors 19 (p423)
• Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p295)
• Chalcogen Double Donors in Silicon
  Published in: Defects in Semiconductors 14 (p911)
• Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
  Published in: Silicon Carbide and Related Materials 2007 (p89)