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Articles by author: H. McD. Hobgood

• Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1113)
• Deep Levels in SiC:V by High Temperature Transport Measurements
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p545)
• Deformation of 4H-SiC Single Crystals Oriented for Prism Slip
  Published in: Silicon Carbide and Related Materials 2003 (p371)
• Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p155)
• Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
  Published in: Silicon Carbide and Related Materials 2003 (p35)
• Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p31)
• Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p759)
• High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p9)
• High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
  Published in: Silicon Carbide and Related Materials 2001 (p23)
• Large Diameter 4H-SiC Substrates for Commercial Power Applications
  Published in: Silicon Carbide and Related Materials 2003 (p41)
• Large Diameter, Low Defect Silicon Carbide Boule Growth
  Published in: Silicon Carbide and Related Materials 2000 (p3)
• Schottky Barriers for Pt on 6H- and 4H-SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
  Published in: Silicon Carbide and Related Materials 2001 (p921)
• Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
  Published in: Silicon Carbide and Related Materials - 2002 (p705)
• Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
  Published in: Silicon Carbide and Related Materials 2003 (p3)
• Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
  Published in: Silicon Carbide and Related Materials - 1999 (p3)