Papers by Author: Hiroshi Sugimoto

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Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
Authors: Kenichi Ohtsuka, Yoichiro Tarui, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami, Tatsuo Ozeki
765
Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
Authors: Kenichi Ohtsuka, Hiroshi Sugimoto, Shin Ichi Kinouchi, Yoichiro Tarui, Masayuki Imaizumi, Tetsuya Takami, Tatsuo Ozeki
1165
Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs
Authors: Masayuki Imaizumi, Yoichiro Tarui, Hiroshi Sugimoto, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki
1203
Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
Authors: Hiroshi Sugimoto, Shin Ichi Kinouchi, Yoichiro Tarui, Masayuki Imaizumi, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki
731
Reactive Ion Etching in CF4 / O2 Gas Mixtures for Fabricating SiC Devices
Authors: Masayuki Imaizumi, Yoichiro Tarui, Hiroshi Sugimoto, J. Tanimura, Tetsuya Takami, Tatsuo Ozeki
1057
Sputter-Etching as a Surface Preparation Technique for Schottky Contacts
Authors: Shin Ichi Kinouchi, Hiroshi Sugimoto, Yoichiro Tarui, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki
821
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