Papers by Author: Hiroyuki Matsunami

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SiC Epitaxy on Non-Standard Surfaces
Authors: Hiroyuki Matsunami, Tsunenobu Kimoto
125
Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE
Authors: Norio Onojima, Jun Suda, Hiroyuki Matsunami
1457
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
Authors: Yuki Negoro, Nao Miyamoto, Tsunenobu Kimoto, Hiroyuki Matsunami
1273
4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH Etching
Authors: Qamar-ul Wahab, Hajime Kosugi, Hiroshi Yano, Christer Hallin, Tsunenobu Kimoto, Hiroyuki Matsunami
1215
4H-SiC MOSFETs on (03-38) Face
Authors: T. Hirao, Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami, Hiromu Shiomi
1065
Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)
Authors: Yuki Negoro, Nao Miyamoto, Tsunenobu Kimoto, Hiroyuki Matsunami
783
Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition
Authors: Jun Suda, Shun-ichi Nakamura, Mineo Miura, Tsunenobu Kimoto, Hiroyuki Matsunami
659
Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC
Authors: Shun-ichi Nakamura, Hironori Kumagai, Tsunenobu Kimoto, Hiroyuki Matsunami
651
Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates
Authors: Yi Chen, Tsunenobu Kimoto, Yuuichi Takeuchi, Hiroyuki Matsunami
255
Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
Authors: Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami
183
Showing 31 to 40 of 64 Paper Titles