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Papers by Author: Hisao Tanoue

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Electrical Activation of Ion-Implanted Nitrogen and Aluminum in 4H-SiC by Excimer Laser Annealing

Authors: Yasunori Tanaka, Hisao Tanoue, Kazuo Arai

605

Low-Temperature Activation of the Ion-Implanted Dopants in 4H-SiC by Excimer Laser Annealing

Authors: Yasunori Tanaka, Hisao Tanoue, Kazuo Arai

799

Coimplantation Effects of (C and Si)/Ga in 6H-SiC

Authors: Yasunori Tanaka, Naoto Kobayashi, Mitsuru Hasegawa, M. Ogura, Yuuki Ishida, Sadafumi Yoshida, Hajime Okumura, Hisao Tanoue

917

Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature

Authors: Junji Senzaki, Kenji Fukuda, Seiji Imai, Yasunori Tanaka, Naoto Kobayashi, Hisao Tanoue, Hideyo Okushi, Kazuo Arai

865

Electrical and Structural Properties of Al and B Implanted 4H-SiC

Authors: Yasunori Tanaka, Naoto Kobayashi, Hajime Okumura, Ryoichi Suzuki, Toshiyuki Ohdaira, Mitsuru Hasegawa, M. Ogura, Sadafumi Yoshida, Hisao Tanoue

909

Hot-Implantation of Phosphorus Ions into 4H-SiC

Authors: Seiji Imai, Setsuko Kobayashi, Takashi Shinohe, Kenji Fukuda, Yasunori Tanaka, Junji Senzaki, Hisao Tanoue, Naoto Kobayashi, Hideyo Okushi

861

Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching

Authors: T. Henkel, Gabriel Ferro, Shin Ichi Nishizawa, H. Pressler, Yasuhito Tanaka, Hisao Tanoue, Naoto Kobayashi

481