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Articles by author: Hisayoshi Itoh

• (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
  Published in: Silicon Carbide and Related Materials 2006 (p307)
• A System for Ultra-Fast Transient Ion and Pulsed Laser Current Microscopies as a Function of Temperature
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p401)
• Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p633)
• Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
  Published in: Silicon Carbide and Related Materials 2000 (p537)
• Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials - 1999 (p1239)
• Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p611)
• Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams
  Published in: Silicon Carbide and Related Materials 2005 (p1347)
• Chemical Vapor Deposition of Turbostratic and Hexagonal Boron Nitride
  Published in: Synthesis and Properties of Boron Nitride (p141)
• Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p685)
• Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation
  Published in: Silicon Carbide and Related Materials 2009 (p1013)
• Deep Defects in 3C-SiC Generated by H⁺- and He⁺-Implantation or by Irradiation with High-Energy Electrons
  Published in: Silicon Carbide and Related Materials 2009 (p439)
• Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
  Published in: Silicon Carbide and Related Materials 2008 (p377)
• Degradation of Charge Collection Efficiency Obtained for 6H-SiC n⁺p Diodes Irradiated with Gold Ions
  Published in: Silicon Carbide and Related Materials 2006 (p913)
• Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p527)
• Effect of Al Composition on Luminescence Properties of Rare-Earth Implanted into AlGaN
  Published in: Advances in Nondestructive Evaluation (p890)