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Papers by Author: Isamu Nashiyama

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Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions

Authors: Takeshi Ohshima, Akira Uedono, Hisayoshi Itoh, Masahito Yoshikawa, Kazutoshi Kojima, Sohei Okada, Isamu Nashiyama, L. Bouwhuis, Shoichiro Tanigawa, Thomas Frank, Gerhard Pensl

857

Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

Authors: Takeshi Ohshima, Masahito Yoshikawa, Hisayoshi Itoh, Kazutoshi Kojima, Sohei Okada, Isamu Nashiyama

1299

Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays

Authors: Masahito Yoshikawa, K. Saitoh, Takeshi Ohshima, Hisayoshi Itoh, Isamu Nashiyama, Yasutaka Takahashi, K. Ohnishi, Hajime Okumura, Sadafumi Yoshida

1017

Study of Thermal Annealing of Vacancies in Ion Implanted 3C-SiC by Positron Annihilation

Authors: Takeshi Ohshima, Akira Uedono, Hisayoshi Itoh, L. Bouwhuis, Ryoichi Suzuki, Toshiyuki Ohdaira, Y. Aoki, Masahito Yoshikawa, Tomohisa Mikado, Hajime Okumura, Sadafumi Yoshida, Shoichiro Tanigawa, Isamu Nashiyama

745

Hot-Implantation of Phosphorus Ions into 6H-SiC

Authors: L. Bouwhuis, Takeshi Ohshima, Hisayoshi Itoh, Y. Aoki, Masahito Yoshikawa, Isamu Nashiyama, Motohiro Iwami

721

ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons

Authors: Dai Bum Cha, Hisayoshi Itoh, Norio Morishita, Atsuo Kawasuso, Takeshi Ohshima, Yuichi Watanabe, J. Ko, Kin Kiong Lee, Isamu Nashiyama

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