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Articles by author: J. Doerschel

• Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p39)
• Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p29)
• Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
  Published in: Silicon Carbide and Related Materials 2001 (p67)
• Morphological Features of Sublimation-Grown 4H-SiC Layers
  Published in: Silicon Carbide and Related Materials - 2002 (p95)
• Process-Induced Changes of the Properties of Silicon Oxide Layers Containing Carbon: A Study of a Low-k Material to be Used in the Interconnection System
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p647)
• Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport
  Published in: Silicon Carbide and Related Materials - 2002 (p91)
• Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p109)