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Articles by author: Jadwiga Bak-Misiuk

• Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He
  Published in: High Pressure Technology of Nanomaterials (p285)
• Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p345)
• Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p313)
• Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p343)
• Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p167)
• GaAIAs Lattice Parameter Dependence on Free Electron Concentration
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p437)
• Hydrogen Gettering within Processed Oxygen-Implanted Silicon
  Published in: Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (p35)
• Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p35)
• Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p169)
• Investigations of the Effect of High Pressure on the Annealing Behavior of Oxygen Related Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p59)
• On the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline Si
  Published in: Defects in Semiconductors 17 (p183)
• Possible Connection of Thermal Expansion and Luminescence of GaP:N, S Epilayers with Sulphur Diffusion to Dislocations
  Published in: Diffusion in Metals and Alloys (p1491)
• Properties of Si:Cr Annealed under Enhanced Stress Conditions
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p375)
• Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p416)
• Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p351)