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Articles by author: Jeong Hyuk Yim

• 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials 2006 (p763)
• Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface
  Published in: Silicon Carbide and Related Materials 2007 (p731)
• Electrical Properties of Atomic-Layer-Deposited La₂O₃/Thermal-Nitrided SiO₂ Stacking Dielectric on 4H-SiC(0001)
  Published in: Silicon Carbide and Related Materials 2006 (p643)
• Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited Si_xN_y
  Published in: Silicon Carbide and Related Materials 2006 (p647)
• Electrical Properties of the La₂O₃/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)₃ and H₂O
  Published in: Silicon Carbide and Related Materials 2005 (p1083)
• Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
  Published in: Advances in Nanomaterials and Processing (p109)
• Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
  Published in: Silicon Carbide and Related Materials 2007 (p151)
• Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
  Published in: Silicon Carbide and Related Materials 2005 (p215)
• Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors
  Published in: Silicon Carbide and Related Materials 2006 (p113)
• Improved 4H-SiC MOS Interface Produced by Oxidized-SiN Gate Oxide
  Published in: Silicon Carbide and Related Materials 2009 (p511)
• Improvement of the Reverse Characteristics of Ti/4H-SiC Schottky Barrier Diodes by Thermal Treatments
  Published in: Advances in Nanomaterials and Processing (p105)
• Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor
  Published in: Silicon Carbide and Related Materials 2007 (p971)