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Articles by author: Jie Zhang

• Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
  Published in: Silicon Carbide and Related Materials 2001 (p259)
• Damping Behavior and Mechanisms in Particulate Reinforced Metal Matrix Composites Processed Using Spray Atomization and Deposition
  Published in: Metal Matrix Composites (p691)
• Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
  Published in: Silicon Carbide and Related Materials - 1999 (p1171)
• Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2001 (p1285)
• Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
  Published in: Silicon Carbide and Related Materials 2000 (p91)
• Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
  Published in: Silicon Carbide and Related Materials - 1999 (p131)
• Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
  Published in: Silicon Carbide and Related Materials 2001 (p191)
• High Growth Rate (up to 20 µm/h) SiC Epitaxy in a Horizontal Hot-Wall Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p77)
• Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy
  Published in: Silicon Carbide and Related Materials 2004 (p397)
• Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
  Published in: Silicon Carbide and Related Materials 2000 (p691)
• In Situ Etching of 4H-SiC in H₂ with Addition of HCl for Epitaxial CVD Growth
  Published in: Silicon Carbide and Related Materials 2001 (p239)
• Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy
  Published in: Silicon Carbide and Related Materials 2000 (p405)
• Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
  Published in: Silicon Carbide and Related Materials - 1999 (p137)
• Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy
  Published in: Silicon Carbide and Related Materials 2001 (p613)
• Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p197)