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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Joseph J. Sumakeris
25 papers on 2 pages:
1
[2]
[next]
12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
Published in:
Silicon Carbide and Related Materials 2007
(p1187)
A 13 kV 4H-SiC n-Channel IGBT with Low R
diff,on
and Fast Switching
Published in:
Silicon Carbide and Related Materials 2007
(p1183)
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
Published in:
Silicon Carbide and Related Materials 2003
(p1113)
Critical Technical Issues in High Voltage SiC Power Devices
Published in:
Silicon Carbide and Related Materials 2007
(p895)
Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
Published in:
Silicon Carbide and Related Materials 2005
(p493)
Defect Status in SiC Manufacturing
Published in:
Silicon Carbide and Related Materials 2008
(p3)
Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
Published in:
Silicon Carbide and Related Materials 2006
(p77)
Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
Published in:
Silicon Carbide and Related Materials 2004
(p155)
Development of Large Area (up to 1.5 cm
2
) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
Published in:
Silicon Carbide and Related Materials 2007
(p931)
Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
Published in:
Silicon Carbide and Related Materials 2004
(p965)
Evolution of Drift-Free, High Power 4H-SiC PiN Diodes
Published in:
Silicon Carbide and Related Materials 2005
(p1329)
Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures
Published in:
Silicon Carbide and Related Materials 2005
(p387)
Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
Published in:
Silicon Carbide and Related Materials 2007
(p99)
Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
Published in:
Silicon Carbide, III-Nitrides and Related Materials
(p107)
High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
Published in:
Silicon Carbide and Related Materials 2005
(p1355)
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