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Articles by author: Kevin Matocha

• 100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules
  Published in: Silicon Carbide and Related Materials 2008 (p899)
• 3kV 4H-SiC Thyristors for Pulsed Power Applications
  Published in: Silicon Carbide and Related Materials 2009 (p1053)
• 4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal
  Published in: Silicon Carbide and Related Materials 2005 (p1265)
• 4H-SiC Oxide Characterization with SIMS Using a ¹³C Tracer
  Published in: Silicon Carbide and Related Materials 2008 (p513)
• 4kV Silicon Carbide MOSFETs
  Published in: Silicon Carbide and Related Materials 2010 (p637)
• 950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability
  Published in: Silicon Carbide and Related Materials 2007 (p1131)
• An Approach to Model Temperature Effects of Interface Traps in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p497)
• Atomistic Scale Modeling and Analysis of Sodium Enhanced Oxidation of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2008 (p493)
• Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2007 (p715)
• Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis
  Published in: Silicon Carbide and Related Materials 2004 (p589)
• Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2009 (p1005)
• Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
  Published in: Silicon Carbide and Related Materials 2007 (p775)
• EDMR and EPR Studies of 4H SiC MOSFETs and Capacitors
  Published in: Silicon Carbide and Related Materials 2009 (p527)
• Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
  Published in: Silicon Carbide and Related Materials 2005 (p427)
• Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2005 (p983)