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Articles by author: Lea Di Cioccio

• 4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh Environments
  Published in: Silicon Carbide and Related Materials 2001 (p1435)
• Advances in SiC Materials and Technology for Schottky Diode Applications
  Published in: Silicon Carbide and Related Materials 2001 (p1119)
• Cubic SiC Surface Structure Studied by X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials - 2002 (p571)
• Defect Characterization of Homo-Epitaxially Grown 6H-SiC on (0001) Silicon and (000-1) Carbon Faces
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p409)
• Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
  Published in: Silicon Carbide and Related Materials 2001 (p1161)
• Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)
  Published in: Silicon Carbide and Related Materials - 1999 (p715)
• Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p141)
• Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p385)
• Intrinsic Mobility of Conduction Electrons in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p483)
• Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
  Published in: Silicon Carbide and Related Materials 2001 (p419)
• Metal Bonding in SiC Based Substrates
  Published in: Silicon Carbide and Related Materials 2004 (p781)
• Nitrogen Doping of Epitaxial SiC: Experimental Evidence of the Re-Incorporation of Etched Nitrogen during Growth
  Published in: Silicon Carbide and Related Materials 2003 (p731)
• Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth Processes
  Published in: Silicon Carbide and Related Materials 2004 (p3)
• QuaSiC Smart-Cut Substrates for SiC High Power Devices
  Published in: Silicon Carbide and Related Materials 2001 (p151)
• SiC In-Situ Pre-Growth Etching: A Thermodynamic Study
  Published in: Silicon Carbide and Related Materials - 1999 (p1041)