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Articles by author: Lothar Ley

• A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC Surfaces
  Published in: Silicon Carbide and Related Materials 2001 (p713)
• ALD Deposited Al₂ O₃ Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere
  Published in: Silicon Carbide and Related Materials 2004 (p559)
• Contactless Measurement of the Thermal Conductivity of Thin SiC Layers
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p657)
• Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p583)
• Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p387)
• Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p331)
• Electronic Raman Studies of Shallow Donors in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p579)
• Electronic Structure of Graphite/6H-SiC Interfaces
  Published in: Silicon Carbide and Related Materials 2006 (p701)
• Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy
  Published in: Silicon Carbide and Related Materials 2001 (p625)
• Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy
  Published in: Silicon Carbide and Related Materials 2007 (p567)
• Growth of 3C-SiC Bulk Material by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials 2003 (p151)
• High Resolution Photoemission Study of the 6H-SiC/SiO₂ Interface
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p375)
• Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
  Published in: Silicon Carbide and Related Materials - 2002 (p305)
• Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy
  Published in: Silicon Carbide and Related Materials 2006 (p525)
• Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy
  Published in: Silicon Carbide and Related Materials 2003 (p1317)