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Articles by author: M.F. Brady

• 100 mm 4HN-SiC Wafers with Zero Micropipe Density
  Published in: Silicon Carbide and Related Materials 2007 (p7)
• Defect Status in SiC Manufacturing
  Published in: Silicon Carbide and Related Materials 2008 (p3)
• High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
  Published in: Silicon Carbide and Related Materials 2001 (p23)
• Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p137)
• Large Diameter 4H-SiC Substrates for Commercial Power Applications
  Published in: Silicon Carbide and Related Materials 2003 (p41)
• Large Diameter, Low Defect Silicon Carbide Boule Growth
  Published in: Silicon Carbide and Related Materials 2000 (p3)
• SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers
  Published in: Silicon Carbide and Related Materials 2005 (p159)
• Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
  Published in: Silicon Carbide and Related Materials 2003 (p3)
• Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
  Published in: Silicon Carbide and Related Materials - 1999 (p3)
• Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
  Published in: Silicon Carbide and Related Materials - 2002 (p39)
• Vanadium-free Semi-insulating 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials - 1999 (p21)