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Papers by Author: M. Weiner

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4,340V, 40 mΩcm² Normally-Off 4H-SiC VJFET

Authors: Jian Hui Zhao, Leonid Fursin, Peter Alexandrov, Larry X. Li, M. Weiner

1161

The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications

Authors: Jian Hui Zhao, Jian Hui Zhang, Yan Bin Luo, X. Hu, Yu Zhu Li, H. Yu, J. Lai, Peter Alexandrov, Leonid Fursin, Larry X. Li, J. Carter, M. Weiner

1137

6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs

Authors: Jian Hui Zhao, Kiyoshi Tone, Larry X. Li, Peter Alexandrov, Leonid Fursin, M. Weiner

1213

Avalanche Multiplication and Breakdown in 4H-SiC Diodes

Authors: B.K. Ng, John P.R. David, D.J. Massey, R.C. Tozer, G.J. Rees, Feng Yan, Jian Hui Zhao, M. Weiner

1069

High Voltage (500V-14kV) 4H-SiC Unipolar Bipolar Darlington Transistors for High-Power and High-Temperature Applications

Authors: Jian Hui Zhao, Larry X. Li, Kiyoshi Tone, Peter Alexandrov, Leonid Fursin, J. Carter, M. Weiner

957

A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC

Authors: Larry X. Li, Leonid Fursin, Jian Hui Zhao, Peter Alexandrov, M. Pan, M. Weiner, Terry Burke, G. Khalil

1345

On the Temperature Coefficient of 4H-SiC npn Transistor Current Gain

Authors: Larry X. Li, Yan Bin Luo, Jian Hui Zhao, Peter Alexandrov, M. Pan, M. Weiner

1333

All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A

Authors: Yan Bin Luo, Leonid Fursin, Jian Hui Zhao, Peter Alexandrov, B. Wright, M. Weiner

1325

A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination

Authors: Feng Yan, C. Qin, Jian Hui Zhao, M. Weiner

1305

A Novel High-Voltage Normally-Off 4H-SiC Vertical JFET

Authors: Jian Hui Zhao, Larry X. Li, Kiyoshi Tone, Peter Alexandrov, M. Pan, M. Weiner

1223