Papers by Author: Marie-Laure David

Abstract: In this study, Co germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Co on Ge, followed by annealing in vacuum at 700°C. The influence of annealing time was investigated on both the electrical properties of Co germanide Schottky barrier diodes and on the phase formation on n-Ge (100) substrate. With increasing annealing times growing or transformation of germanide entities occurs leading to reduction of the trap concentration and therefore the leakage current.

Abstract: (001) n-type Ge has been implanted at given fluence and intermediate temperature with hydrogen ions using two processes: conventional in-line implantation and plasma based ion implantation. The as-created microstructure has been compared using transmission electron microscopy. In particular, it has been shown that the major differences observed are due to the implantation temperature, much higher during the PBII process. This suggests that plasma based ion implantation could be used for layer transfer in spite of a higher surface roughness observed after the PBII process.

Abstract: Different group IV impurities (Pb, C, and Sn) have been introduced in the melt during the growth of n-type Czochralski silicon. The samples have been irradiated with 1 MeV electrons to a fluence of 4x1015cm-2. The irradiation-induced defects have been studied by Deep Level Transient Spectroscopy (DLTS). It is shown that the formation of one of the irradiation-induced deep level is avoided by the Pb-doping. This level is located at 0.37 eV from the conduction band edge (EC) and shows an apparent capture cross-section of 7x10-15cm2. In addition, another irradiation induced deep level located at EC - 0.32 eV has been studied in more details.