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Papers by Author: Martin S. Janson

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Ion Implantation Processing and Related Effects in SiC

Authors: Bengt Gunnar Svensson, Anders Hallén, J. Wong-Leung, Martin S. Janson, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, H. K.-Nielsen, C. Jagadish, Joachim Grillenberger

Abstract: A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, and deactivation of N donors by ion-induced defects.

781

In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates

Authors: Margareta K. Linnarsson, Martin S. Janson, Urban Forsberg, Erik Janzén

637

Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC

Authors: Margareta K. Linnarsson, Martin S. Janson, Adolf Schöner, Andrey O. Konstantinov, Bengt Gunnar Svensson

917

Properties of the Bound Excitons Associated to the 3838Å Line in 4H-SiC and the 4182Å Line in 6H-SiC

Authors: Anne Henry, Martin S. Janson, Erik Janzén

549

Vacancy-Type Defect Distributions of ¹¹B-, ¹⁴N- and ²⁷Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy

Authors: Martin S. Janson, J. Slotte, Andrej Yu. Kuznetsov, Kimmo Saarinen, Anders Hallén

641

The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures

Authors: Lars Unéus, Shinji Nakagomi, Margareta K. Linnarsson, Martin S. Janson, Bengt Gunnar Svensson, Rositza Yakimova, Mikael Syväjärvi, Anne Henry, Erik Janzén, Lars-G. Ekedahl, Ingemar Lundström, Anita Lloyd Spetz

1419

Range Distributions of Implanted Ions in Silicon Carbide

Authors: Martin S. Janson, Margareta K. Linnarsson, Anders Hallén, Bengt Gunnar Svensson

779

Incorporation of Hydrogen (¹H and ²H) into 4H-SiC during Epitaxial Growth

Authors: Margareta K. Linnarsson, Urban Forsberg, Martin S. Janson, Erik Janzén, Bengt Gunnar Svensson

565

Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si

Authors: Martin S. Janson, Margareta K. Linnarsson, J.S. Christensen, P. Lévêque, Andrej Yu. Kuznetsov, H.H. Radamson, Anders Hallén, Arne Nylandsted-Larsen, Bengt Gunnar Svensson

597

Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC

Authors: Martin S. Janson, Anders Hallén, Margareta K. Linnarsson, Nils Nordell, S. Karlsson, Bengt Gunnar Svensson

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