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Articles by author: Masashi Nakabayashi

• 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
  Published in: Silicon Carbide and Related Materials 2005 (p153)
• Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
  Published in: Silicon Carbide and Related Materials 2007 (p819)
• Effects of Lattice Defects on Degradation of Flash Memory Cell
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p231)
• Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality
  Published in: Silicon Carbide and Related Materials 2009 (p9)
• Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
  Published in: Silicon Carbide and Related Materials 2007 (p3)
• Impact of High-Energy Particle Irradiation on Polycrystalline Silicon Films
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p471)
• Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p119)
• Negative Photoconductivity in Polycrystalline Silicon Films Doped with Phosphorus
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p225)
• Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p699)
• Radial Expansion Growth of SiC Single Crystals with Higher Crystal Quality
  Published in: Silicon Carbide and Related Materials 2003 (p79)
• Radiation Damage in npn Si Transistors due to High-Temperature Gamma Ray and 1-MeV Electron Irradiation
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p465)
• Radiation Induced Lattice Defects in n-MOSFETs and Their Effects on Device Performance
  Published in: Beam Injection Assessment of Microstructures in Semiconductors (p205)
• Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
  Published in: Silicon Carbide and Related Materials 2007 (p341)
• Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2009 (p311)
• Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2009 (p319)