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Papers by Author: Mats Kleverman

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Effective-Mass Theory of Shallow Donors in 4H-SiC

Authors: Ivan G. Ivanov, A. Stelmach, Mats Kleverman, Erik Janzén

Abstract: The one-valley effective-mass approximation is developed for the case of uniaxial crystals with indirect bandgap and applied to the donor states in 4H-SiC. Good agreement is found between the theory and experiments providing data on the electronic states of the shallowest nitrogen donor in 4H-SiC. The ionization energy of this donor is deduced to be 61.35 ± 0.2 meV.

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Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon

Authors: Vladimir P. Markevich, B. Hourahine, R.C. Newman, R. Jones, Mats Kleverman, J. Lennart Lindström, L.I. Murin, Masashi Suezawa, Sven Öberg, Patrick R. Briddon

Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies

Authors: L.I. Murin, V.P. Markevich, J. Lennart Lindström, Mats Kleverman, J. Hermansson, T. Hallberg, Bengt Gunnar Svensson

Oxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated Temperatures

Authors: J. Lennart Lindström, T. Hallberg, J. Hermansson, L.I. Murin, V.P. Markevich, Mats Kleverman, Bengt Gunnar Svensson

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Pseudo or Deep Donor Excitation Spectra in Silicon

Authors: Mats Kleverman

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Identification of the Si:Au and Si:Pt 1S_3/2(Г₈)+Г Phonon-Assisted Fano Resonance

Authors: Mats Kleverman, J. Olajos, P. Tidlund

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The Orthorhombic FeIn Complex in Silicon

Authors: Per Tidlund, Mats Kleverman

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Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C

Authors: P. Liberski, T. Hallberg, Bengt Gunnar Svensson, J. Lennart Lindström, Mats Kleverman

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Identification of the Iron-Boron Line Spectrum in Silicon

Authors: S. Ghatnekar-Nilsson, Mats Kleverman, P. Emanuelsson, Hermann G. Grimmeiss

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The Excited ⁵T₁ State of the Fe_i^o -Center in Silicon

Authors: A. Thilderkvist, G. Grossmann, Mats Kleverman, Hermann G. Grimmeiss

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