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Articles by author: Michael J. Paisley

• 100 mm 4HN-SiC Wafers with Zero Micropipe Density
  Published in: Silicon Carbide and Related Materials 2007 (p7)
• Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
  Published in: Silicon Carbide and Related Materials 2003 (p1113)
• Defect Status in SiC Manufacturing
  Published in: Silicon Carbide and Related Materials 2008 (p3)
• Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
  Published in: Silicon Carbide and Related Materials 2004 (p155)
• Development of Large Area (up to 1.5 cm²) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers
  Published in: Silicon Carbide and Related Materials 2007 (p931)
• Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p107)
• High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
  Published in: Silicon Carbide and Related Materials 2003 (p1105)
• Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
  Published in: Silicon Carbide and Related Materials 2004 (p137)
• SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers
  Published in: Silicon Carbide and Related Materials 2005 (p159)
• Structure of Carrot Defects in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2005 (p327)
• Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V_f Drift in SiC Bipolar Power Devices
  Published in: Silicon Carbide and Related Materials 2005 (p141)