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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Mrinal K. Das
33 papers on 3 pages:
1
[2]
[3]
[next]
10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies
Published in:
Silicon Carbide and Related Materials 2011
(p1225)
4H-SiC DMOSFETs for High Speed Switching Applications
Published in:
Silicon Carbide and Related Materials 2004
(p797)
9 kV 4H-SiC IGBTs with 88 mΩ·cm
2
of R
diff, on
Published in:
Silicon Carbide and Related Materials 2006
(p771)
A 13 kV 4H-SiC n-Channel IGBT with Low R
diff,on
and Fast Switching
Published in:
Silicon Carbide and Related Materials 2007
(p1183)
Anomalously High Density of Interface States Near the Conduction Band in SiO
2
/4H-SiC MOS Devices
Published in:
Silicon Carbide and Related Materials - 1999
(p1069)
Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
Published in:
Silicon Carbide and Related Materials 2003
(p1113)
Bipolar Degradation of High Voltage 4H-SiC
p-i-n
Diodes in Pulse Regime
Published in:
Silicon Carbide and Related Materials 2010
(p539)
Critical Technical Issues in High Voltage SiC Power Devices
Published in:
Silicon Carbide and Related Materials 2007
(p895)
Development of 8 mΩ-cm
2
, 1.8 kV 4H-SiC DMOSFETs
Published in:
Silicon Carbide and Related Materials 2005
(p1261)
Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
Published in:
Silicon Carbide and Related Materials 2004
(p155)
Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
Published in:
Silicon Carbide and Related Materials 2004
(p965)
Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process
Published in:
Silicon Carbide and Related Materials 2006
(p921)
Enhanced Carrier Lifetime in Bulk-Grown 4H-SiC Substrates
Published in:
Silicon Carbide and Related Materials 2005
(p31)
Evolution of Drift-Free, High Power 4H-SiC PiN Diodes
Published in:
Silicon Carbide and Related Materials 2005
(p1329)
High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
Published in:
Silicon Carbide and Related Materials 2005
(p1355)
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