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Papers by Author: Naoto Kobayashi

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Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact

Authors: Yigang Chen, Mitsuru Hasegawa, S. Yamanaka, Hideyo Okushi, Naoto Kobayashi

945

Defect Characteristics in Sulfur-Implanted CVD Homoepitaxial Diamond

Authors: Mitsuru Hasegawa, M. Ogura, Daisuke Takeuchi, Sadanori Yamanaka, Hideyuki Watanabe, Shien Ri, Naoto Kobayashi, Hideyo Okushi, Takashi Sekiguchi

171

Coimplantation Effects of (C and Si)/Ga in 6H-SiC

Authors: Yasunori Tanaka, Naoto Kobayashi, Mitsuru Hasegawa, M. Ogura, Yuuki Ishida, Sadafumi Yoshida, Hajime Okumura, Hisao Tanoue

917

Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC

Authors: Takaya Ohno, Naoto Kobayashi

913

Beryllium Implantation Doping of Silicon Carbide

Authors: T. Henkel, Yasuhito Tanaka, Naoto Kobayashi, Shin Ichi Nishizawa, Shunichi Hishita

953

Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature

Authors: Junji Senzaki, Kenji Fukuda, Seiji Imai, Yasunori Tanaka, Naoto Kobayashi, Hisao Tanoue, Hideyo Okushi, Kazuo Arai

865

Electrical and Structural Properties of Al and B Implanted 4H-SiC

Authors: Yasunori Tanaka, Naoto Kobayashi, Hajime Okumura, Ryoichi Suzuki, Toshiyuki Ohdaira, Mitsuru Hasegawa, M. Ogura, Sadafumi Yoshida, Hisao Tanoue

909

Hot-Implantation of Phosphorus Ions into 4H-SiC

Authors: Seiji Imai, Setsuko Kobayashi, Takashi Shinohe, Kenji Fukuda, Yasunori Tanaka, Junji Senzaki, Hisao Tanoue, Naoto Kobayashi, Hideyo Okushi

861

Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching

Authors: T. Henkel, Gabriel Ferro, Shin Ichi Nishizawa, H. Pressler, Yasuhito Tanaka, Hisao Tanoue, Naoto Kobayashi

481

The Characterization of SiC Hot-Implanted with Ga ⁺

Authors: Yasuhito Tanaka, Naoto Kobayashi, Mitsuru Hasegawa, Sadafumi Yoshida, Yuuki Ishida, T. Nishijima, N. Hayashi

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