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Articles by author: Nobuyoshi Yashiro

• Crystal Growth of 4H-SiC on 6H-SiC by Traveling Solvent Method
  Published in: Silicon Carbide and Related Materials 2010 (p36)
• Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution
  Published in: Silicon Carbide and Related Materials 2005 (p115)
• Liquid Phase Epitaxy of 4H-SiC Layers on On-Axis PVT Grown Substrates
  Published in: Silicon Carbide and Related Materials 2008 (p137)
• LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application
  Published in: Silicon Carbide and Related Materials 2008 (p141)
• Solution Growth and Crystallinity Characterization of Bulk 6H-SiC
  Published in: Silicon Carbide and Related Materials 2009 (p33)
• Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N₂-He Atmosphere
  Published in: Silicon Carbide and Related Materials 2007 (p187)
• Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique
  Published in: Silicon Carbide and Related Materials 2007 (p191)
• Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
  Published in: Silicon Carbide and Related Materials 2005 (p119)
• Solution Growth of Single Crystalline 6H-SiC from Si-Ti-C Ternary Solution
  Published in: Innovation in Ceramic Science and Engineering (p89)
• XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
  Published in: Silicon Carbide and Related Materials 2006 (p303)