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Articles by author: Olga V. Feklisova

• About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p327)
• Comparative Study of Electrical and Optical Properties of Plastically Deformed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p425)
• EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p567)
• Electrical and Optical Properties of Dislocations Generated under Pure Conditions
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p453)
• Electrical Properties of Oxygen Precipitates Formed During Two Step Low Temperature Annealing
  Published in: Polycrystalline Semiconductors V (p39)
• Formation of Electrical Activity of Dislocations in Si during Plastic Deformation
  Published in: Polycrystalline Semiconductors IV (p15)
• Gold Diffusion as a Tool for Defect Characterization in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p495)
• Hydrogen Penetration into Si under Wet Chemical Etching: Experiment and Simulation
  Published in: Polycrystalline Semiconductors VI (p121)
• Hydrogen-Related Defects in High-Resistivity Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p150)
• Impurity Effect on the Dislocation DLTS Spectrum in Silicon
  Published in: Polycrystalline Semiconductors V (p27)
• Increase of Electrical Activity of Dislocations in Si during Plastic Deformation
  Published in: Defects in Semiconductors 18 (p1183)
• Metastability of Electrical Properties of Dislocations in Silicon
  Published in: Defects in Semiconductors 15 (p1373)
• Recombination Activity of Twin Boundaries in Silicon Ribbons
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p106)
• SEM Characterization of Silicon Layers Grown on Carbon Foil
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p473)
• XBIC Investigation of the Grain Boundaries in Multicrystalline Si on the Laboratory X-Ray Source
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p226)