Papers by Author: P. Pirouz

Paper TitlePage

In Situ Studies of Structural Instability in Operating 4H-SiC PiN Diodes
Authors: Augustinas Galeckas, Jan Linnros, P. Pirouz
933
The Brittle-to-Ductile Transition in 4H-SiC
Authors: M. Zhang, H. McD. Hobgood, Jean Luc Demenet, P. Pirouz
767
Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor
Authors: Song Bai, Günter Wagner, E. Shishkin, Wolfgang J. Choyke, Robert P. Devaty, M. Zhang, P. Pirouz, Tsunenobu Kimoto
589
4H- to 3C-SiC Polytypic Transformation during Oxidation
Authors: Robert S. Okojie, Ming Xhang, P. Pirouz, Sergey P. Tumakha, Gregg Jessen, Leonard J. Brillson
451
The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process
Authors: Chien-Hung Wu, Juyong Chung, Moon Hi Hong, Christian A. Zorman, P. Pirouz, Mehran Mehregany
167
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
Authors: Chien-Hung Wu, Juyong Chung, Moon Hi Hong, Christian A. Zorman, P. Pirouz, Mehran Mehregany
171
Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates
Authors: Chacko Jacob, P. Pirouz, Shigehiro Nishino
127
Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering
Authors: W.C. Mitchel, J. Brown, D. Buckanan, R. Bertke, K. Malalingham, F. Orazio, P. Pirouz, Huang-Ju R. Tseng, Uma B. Ramabadran, Bahram Roughani
841
Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX
Authors: Moon Hi Hong, Juyong Chung, F. Namavar, P. Pirouz
525
Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples
Authors: Jean Luc Demenet, Moon Hi Hong, P. Pirouz
517
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