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Articles by author: Paul Clauws

• Bistability of Thermal Donors in Germanium Investigated by Far-IR Spectroscopy
  Published in: Shallow Impurities in Semiconductors IV (p339)
• Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy
  Published in: Defects in Semiconductors 19 (p405)
• DLTS of High-Resistivity Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p493)
• DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p547)
• Extended Defects in Silicon: an Old and New Story
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p263)
• Far-IR Spectroscopy of Oxygen Donors in Germanium
  Published in: Defects in Semiconductors 14 (p941)
• Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge
  Published in: Defects in Semiconductors 19 (p103)
• Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium
  Published in: Defects and Diffusion in Semiconductors - An Annual Retrospective VII (p149)
• Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p229)
• Lattice Defects Induced in Si_1-xGe_x Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p247)
• Metal In-Diffusion during Fe and Co-Germanidation of Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p47)
• Metastable Thermal Donor States in Germanium Identified by Far-IR Spectroscopy
  Published in: Defects in Semiconductors 15 (p473)
• Microscopic Observation of Plastic Deformation of Polycrystalline Iron
  Published in: Advances in Engineering Plasticity (p141)
• New Results on the Bound Exciton Luminescence in Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIV (p289)
• On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.
  Published in: Defects in Semiconductors 18 (p1147)