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Articles by author: Ronald J. Gutmann

• 930, 170Ω.cm² Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
  Published in: Silicon Carbide and Related Materials 2003 (p1413)
• Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant
  Published in: Silicon Carbide and Related Materials - 1999 (p1211)
• Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
  Published in: Silicon Carbide and Related Materials 2004 (p405)
• Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes
  Published in: Silicon Carbide and Related Materials 2007 (p1003)
• Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p757)
• Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
  Published in: Silicon Carbide and Related Materials - 1999 (p1331)
• Design and Implementation of RESURF MOSFETs in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p715)
• Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial Films
  Published in: Silicon Carbide and Related Materials 2004 (p961)
• Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
  Published in: Silicon Carbide and Related Materials 2001 (p1535)
• Gallium Nitride Power Device Design Tradeoffs
  Published in: Silicon Carbide and Related Materials 2001 (p1531)
• Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1041)
• Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
  Published in: Silicon Carbide and Related Materials 2001 (p1089)
• Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill
  Published in: Silicon Carbide and Related Materials 2005 (p1363)
• Interface Properties of 4H-SiC/SiO₂ with MOS Capacitors and FETs Annealed in O₂, N₂O, NO and CO₂
  Published in: Silicon Carbide and Related Materials 2003 (p1309)
• Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p1279)