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Articles by author: Sergei V. Koveshnikov

• Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p393)
• Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p183)
• Electrical Properties of Dislocation Impurity Atmospheres in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p367)
• Enhanced Gold Diffusion in Silicon under Intrinsic Point Defect Flow
  Published in: Defects in Semiconductors I (p227)
• Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p247)
• Metallic Impurity Gettering in MeV Implanted Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p69)
• Metastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) Heterostructures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p325)
• Modification of the Properties of Si Crystals Exposed to Atomic Hydrogen at High Temperatures
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p265)
• The Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p341)