Papers by Author: Sergei V. Koveshnikov

Paper TitlePage

Application of Gate Oxide Integrity to the Evaluation of the Efficiency of Internal and External Gettering Sites in Si Wafers
Authors: Sergei V. Koveshnikov, David Beauchaine, Zbigniew J. Radzimski, Li Ling, K.V. Ravi
393
Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon
Authors: K.L. Beaman, J.M. Glasko, Sergei V. Koveshnikov, George A. Rozgonyi
247
Metallic Impurity Gettering in MeV Implanted Si
Authors: O.V. Kononchuk, R.A. Brown, Sergei V. Koveshnikov, K.L. Beaman, F. Gonzalez, George A. Rozgonyi
69
Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing
Authors: Sergei V. Koveshnikov, Anant K. Agarwal, K.L. Beaman, George A. Rozgonyi
183
Metastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) Heterostructures
Authors: Sergei V. Koveshnikov, Anant K. Agarwal, George A. Rozgonyi
325
Enhanced Gold Diffusion in Silicon under Intrinsic Point Defect Flow
Authors: Sergei V. Koveshnikov, Eugene B. Yakimov, Nikolai Yarykin
227
Modification of the Properties of Si Crystals Exposed to Atomic Hydrogen at High Temperatures
Authors: Sergei V. Koveshnikov, S.V. Nosenko, A.M. Surma
265
Electrical Properties of Dislocation Impurity Atmospheres in Si
Authors: Eugene B. Yakimov, Nikolai Yarykin, Sergei V. Koveshnikov
367
The Peculiarities of Deep Level Defect Passivation in SI by Atomic Hydrogen
Authors: Sergei V. Koveshnikov, S.V. Nosenko, Eugene B. Yakimov
341
Showing 1 to 9 of 9 Paper Titles