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Articles by author: T. Mohammed-Brahim

• Behavior of Polysilicon Thin-Film Transistors at Different Temperatures
  Published in: Polycrystalline Semiconductors VII (p67)
• Control of the Weak Phosphorus Doping in Polysilicon
  Published in: Cross-Disciplinary Applied Research in Materials Science and Technology (p305)
• Correlation between the Ageing and the Grain Size of Polysilicon Thin-Film Transistors
  Published in: Polycrystalline Semiconductors VI (p343)
• Influence of Thermal Treatments on the Crystallisation of LPCVD-Deposited Si Thin Films
  Published in: Polycrystalline Semiconductors VI (p199)
• Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors
  Published in: Polycrystalline Semiconductors V (p541)
• Morphological Characterization of Polysilicon Films Laser-Annealed in Argon Ambient
  Published in: Polycrystalline Semiconductors VI (p175)
• Numerical Modeling and Simulation of Output Parameters in Poly-Si Homojunction nip (or pin) Solar Cells
  Published in: Polycrystalline Semiconductors VI (p317)
• Polysilicon Thin-Film Transistors Based on Frequency Doubled cw-Nd: YVO₄ Laser Crystallized Silicon
  Published in: Polycrystalline Semiconductors VII (p55)
• Process to Fabricate High Performance Solid Phase Crystallized n-Type and p-Type Thin Film Transistors on Glass Substrate
  Published in: Polycrystalline Semiconductors V (p547)
• Realization of Power Polysilicon Diodes on Indium-Tin-Oxide Substrates for Holographic Commutation Matrix
  Published in: Polycrystalline Semiconductors IV (p573)
• Silicon Films Deposited by Low-Pressure Chemical Vapour Deposition for Microsystems
  Published in: Polycrystalline Semiconductors VII (p453)
• Simulation of the Backward Current in Polycrystalline Silicon Thin-Film Transistors
  Published in: Polycrystalline Semiconductors VI (p379)
• Study of Polysilicon Produced by Solid Phase Crystallization of Hydrogenated Amorphous Silicon Deposited at High Rate
  Published in: Polycrystalline Semiconductors V (p217)
• Thin Polycrystalline Silicon Films Annealed at 950°C: Structural and Electrical Properties and Application to Thin Film Transistors
  Published in: Polycrystalline Semiconductors IV (p603)
• Transmission Electron Microscopy and Raman Analysis of the Crystallisation Process of a-Si on Glass for Low Seed Density
  Published in: Polycrystalline Semiconductors V (p205)