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Articles by author: Taro Nishiguchi

• Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
  Published in: Silicon Carbide and Related Materials 2003 (p621)
• Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
  Published in: Silicon Carbide and Related Materials 2001 (p407)
• Crystal Growth of 15R-SiC and Various Polytype Substrates
  Published in: Silicon Carbide and Related Materials 2000 (p69)
• Crystal Growth of 15R-SiC Boules by Sublimation Method
  Published in: Silicon Carbide and Related Materials - 1999 (p115)
• Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2003 (p289)
• Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
  Published in: Silicon Carbide and Related Materials 2005 (p35)
• Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
  Published in: Silicon Carbide and Related Materials 2004 (p185)
• Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
  Published in: Silicon Carbide and Related Materials 2003 (p47)
• Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
  Published in: Silicon Carbide and Related Materials 2004 (p177)
• Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method
  Published in: Silicon Carbide and Related Materials 2000 (p77)
• Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
  Published in: Silicon Carbide and Related Materials 2006 (p275)
• Observation of 2in SiC Wafer by SWBXT at SPring-8
  Published in: Silicon Carbide and Related Materials 2001 (p411)
• Observation of Planar Defects in 2-inch SiC Wafer
  Published in: Silicon Carbide and Related Materials 2001 (p79)
• Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
  Published in: Silicon Carbide and Related Materials 2007 (p329)
• Pendeo Epitaxial Growth of 3C-SiC on Si Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p257)