HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Thomas L. Straubinger

• Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p397)
• Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
  Published in: Silicon Carbide and Related Materials 2001 (p131)
• Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
  Published in: Silicon Carbide and Related Materials - 1999 (p71)
• Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p31)
• Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
  Published in: Silicon Carbide and Related Materials - 1999 (p39)
• High Quality 100mm 4H-SiC Substrates with Low Resistivity
  Published in: Silicon Carbide and Related Materials 2009 (p3)
• Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
  Published in: Silicon Carbide and Related Materials 2000 (p11)
• Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials 2001 (p127)
• Increase of SiC Substrate Resistance Induced by Annealing
  Published in: Silicon Carbide and Related Materials 2009 (p223)
• 'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging
  Published in: Silicon Carbide and Related Materials 2001 (p91)
• Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
  Published in: Silicon Carbide and Related Materials 2000 (p33)
• Investigations on Polytype Stability and Dislocation Formation in 4H-SiC Grown by PVT
  Published in: Silicon Carbide and Related Materials 2007 (p11)
• Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions
  Published in: Silicon Carbide and Related Materials 2004 (p25)
• Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p65)
• On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2001 (p139)