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Articles by author: Tomoaki Furusho

• 6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
  Published in: Silicon Carbide and Related Materials 2005 (p263)
• Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
  Published in: Silicon Carbide and Related Materials 2001 (p407)
• Characterization of Schottky Diodes on 4H-SiC with Various Off-Axis Angles Grown by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2007 (p967)
• Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2003 (p289)
• Crystal Growth of Aluminum Nitride by Sublimation Close Space Technique
  Published in: Silicon Carbide and Related Materials 2001 (p1449)
• Dependence of DAP Emission Properties on Impurity Concentrations in N-/B-co-doped 6H-SiC
  Published in: Silicon Carbide and Related Materials 2006 (p335)
• Effect of Tantalum in Sublimation Growth of Aluminum Nitride
  Published in: Silicon Carbide and Related Materials - 2002 (p975)
• Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
  Published in: Silicon Carbide and Related Materials 2005 (p35)
• Growth of p-Type SiC Layer by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials - 2002 (p205)
• High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials
  Published in: Silicon Carbide and Related Materials 2003 (p115)
• Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials 2001 (p279)
• Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique
  Published in: Silicon Carbide and Related Materials 2004 (p129)
• Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
  Published in: Silicon Carbide and Related Materials - 1999 (p217)
• Micropipe Filling by the Sublimation Close Space Technique
  Published in: Silicon Carbide and Related Materials 2000 (p73)
• Observation of 2in SiC Wafer by SWBXT at SPring-8
  Published in: Silicon Carbide and Related Materials 2001 (p411)