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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Tomonori Nakamura
16 papers on 2 pages:
1
[2]
[next]
8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
Published in:
Silicon Carbide and Related Materials 2004
(p969)
An Approach to BaTiO
3
-Based Low-Loss Dielectric Ceramics
Published in:
Electroceramics in Japan II
(p19)
Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)
Published in:
Silicon Carbide and Related Materials 2001
(p839)
Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
Published in:
Silicon Carbide and Related Materials 2005
(p927)
Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
Published in:
Silicon Carbide and Related Materials 2005
(p231)
Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
Published in:
Silicon Carbide and Related Materials 2005
(p489)
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
Published in:
Silicon Carbide and Related Materials 2005
(p415)
Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
Published in:
Silicon Carbide and Related Materials 2005
(p1359)
Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
Published in:
Silicon Carbide and Related Materials 2004
(p721)
Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates
Published in:
Silicon Carbide and Related Materials 2004
(p97)
NiSi
2
Ohmic Contact to n-Type 4H-SiC
Published in:
Silicon Carbide and Related Materials 2001
(p889)
Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
Published in:
Silicon Carbide and Related Materials 2005
(p375)
Ohmic Contact Formation on n-Type 6H-SiC using NiSi
2
Published in:
Silicon Carbide and Related Materials - 1999
(p985)
Plasma Oxidation of SiC at Low Temperatures (below 300ÂșC)
Published in:
Silicon Carbide and Related Materials 2001
(p1105)
Superplasticity in La
55
Al
20
Ni
25
Metallic Glass
Published in:
Towards Innovation in Superplasticity II
(p379)
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