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Papers by Author: Toshihiro Sekigawa

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Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures

Authors: Kenji Fukuda, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Kiyoko Nagai, Toshihiro Sekigawa, Hideyo Okushi, Sadafumi Yoshida, Tomoyuki Tanaka, Kazuo Arai

1283

Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition

Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Toshihiro Sekigawa, Sadafumi Yoshida

1235

Effect of Post-oxidation-annealing in Hydrogen on SiO₂/4H-SiC Interface

Authors: Seiji Suzuki, Kenji Fukuda, Hideyo Okushi, Kiyoko Nagai, Toshihiro Sekigawa, Sadafumi Yoshida, Tomoyuki Tanaka, Kazuo Arai

1073

The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate

Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Toshihiro Sekigawa, Sadafumi Yoshida

253

Surface Morphology of 3C-SiC Heteroepitaxial Layers Grown by LPCVD on Si Substrates

Authors: Tetsuo Takahashi, Yuuki Ishida, Hajime Okumura, Sadafumi Yoshida, Toshihiro Sekigawa

207

CVD Growth Mechanism of 3C-SiC on Si Substrates

Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida, Toshihiro Sekigawa

183

Hydrogen-Plasma Treated CVD Amorphous Silicon: Growth and Properties

Authors: I. Sakata, Mitsugu Yamanaka, Toshihiro Sekigawa, Yoshikazu Hayashi

127