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Papers by Author: Toshiyuki Ohno

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Characterization of the Forward Conduction of 4H-SiC Planar Junction Diode

Authors: Toshiyuki Ohno, Takaya Ohno, Kensuke Amemiya, Atsuo Watanabe

835

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Authors: Kazutoshi Kojima, Toshiyuki Ohno, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Mitsuhiro Kushibe, Koh Masahara, Yuuki Ishida, Sadafumi Yoshida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

1053

Masking Process for High-Energy and High-Temperature Ion Implantation

Authors: Takasumi Ohyanagi, Hidekatsu Onose, Atsuo Watanabe, Tomoyuki Someya, Toshiyuki Ohno, Kensuke Amemiya, Yutaka Kobayashi

867

Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC

Authors: Toshiyuki Ohno, Kensuke Amemiya

823

Replication of Defects from 4H-SiC Wafer to Epitaxial Layer

Authors: Toshiyuki Ohno, Hirotaka Yamaguchi, Kazutoshi Kojima, Johji Nishio, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Sadafumi Yoshida

447

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Authors: Mitsuru Hasegawa, Akihiro Miyauchi, Koh Masahara, Yuuki Ishida, Tetsuo Takahashi, Toshiyuki Ohno, Johji Nishio, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

227

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Authors: Johji Nishio, Mitsuhiro Kushibe, Koh Masahara, Kazutoshi Kojima, Toshiyuki Ohno, Yuuki Ishida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Sadafumi Yoshida, Kazuo Arai

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