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Articles by author: Vitaly V. Kveder

• Microstructural and Electrical Properties of NiSi₂ Precipitates at Dislocations in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p447)
• Comparison of Efficiency and Kinetics of Phosphorus-Diffusion and Aluminum Gettering of Metal Impurities in Silicon: a Simulation study
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p229)
• Dislocation Related Electroluminescence at Room Temperature in Plastically Deformed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p419)
• Dislocations in Semiconductors as One Dimensional Electronic Systems
  Published in: Defects in Semiconductors I (p461)
• Dislocations in Silicon and D-Band Luminescence for Infrared Light Emitters
  Published in: Advances in Light Emitting Materials (p29)
• Electrical Activity of Dislocations in Si Decorated by Ni
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p361)
• Electrical Effects of Point Defect Clouds at Dislocations in Silicon, Studied by Deep Level Transient Spectroscopy
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p213)
• Electrical Properties of Clustered and Precipitated Iron in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p109)
• Electric-Dipole Spin Resonance on Extended Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p279)
• Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance
  Published in: Defects in Semiconductors 18 (p1189)
• I. Conductivity Along Dislocations: Temperature Dependence and Nonlinear Effects II. Combined Resonance and Structure Peculiarities of Plastically Deformed Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p301)
• Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p433)
• Influence of Magnetic Field on the Unlocking Stress for Dislocation Motion in Cz-Si Depending on Pre-Annealing Time
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p163)
• Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p175)
• Interaction of Interstitially Dissolved Cobalt and Oxygen-Related Centres in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p553)